Researchers boost potential for Gallium nitride electronics
1 min read
While Gallium nitride (GaN) holds promise for more energy efficient high power electronics devices, it has traditionally been unable to withstand high voltages. Now, researchers at North Carolina State University claim to have solved the problem by introducing a buffer that allows the GaN devices to handle 10 times greater power. The breakthrough could pave the way for emerging renewable technologies such as the smart grid or electric cars.
Merve Ozbek, a PhD student at NC State and author of the research, said: "Previous research into developing high power GaN devices has run into obstacles because large electric fields were created at specific points on the devices' edge when high voltages were applied – effectively destroying them. We addressed this problem by implanting a buffer made of the element argon at the edges of GaN devices. The buffer spreads out the electric field, allowing the device to handle much higher voltages."
The researchers tested the new technique on Schottky diodes – common electronic components – and found that the argon implant allowed the GaN diodes to handle much higher voltages. The diodes that did not have the argon implant broke down when exposed to approximately 250V, but the diodes with the argon implant could handle up to 1,650V.
"By improving the breakdown voltage, we can reduce the electrical resistance of these devices a hundredfold," said Dr Jay Baliga, University Professor of Electrical and Computer Engineering at NC State and co author of the paper. "That reduction in resistance means that these devices can handle 10 times as much power."
