Toshiba, SanDisk announce Japanese JV
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Toshiba and SanDisk are to build a 300mm fab in Japan in a move to meet anticipated future demand for NAND flash memory. The facility is planned to start production in 2010.
As part of the deal, the two companies will form a new joint venture, with both funding equipment costs equally. Half of the new fab’s production capacity will be allocated to the joint venture and both companies will share wafer output. However, the remaining capacity will be managed by Toshiba, with half of this provided to SanDisk on a committed foundry basis.
Shozo Saito, president and ceo of Toshiba’s Semiconductor Company, said: “NAND flash memory is enjoying rapid growth and is expected to expand with new applications in coming years. Toshiba is committed to support such growth of NAND flash memory through continued proactive capital investments in production capacity and advanced process technology. The new fab will build on the strong record of success we have achieved with SanDisk in flash memory product development and production, and further strengthen our partnership.”