Toshiba, SanDisk move into new NAND dimension
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Toshiba is to demolish Fab 2, its NAND flash memory facility at the Yokkaichi site in Japan, and replace it with a new fab for the manufacture of 3D NAND.
Construction of the new fab is planned to start in September 2014, with a target completion date of Summer 2015. The clean room within the new fab will be built in phases to align the clean room investment with the timing of conversion of 2D NAND capacity to 3D NAND. Construction of the initial cleanroom will be complete in time for 2016 output.
Yasuo Naruke, Toshiba's corporate senior vice president, who is also president and CEO of Semiconductor & Storage Products, said: "Our determination to develop advanced technologies underlines our commitment to respond to continued demand of NAND flash memory. We are confident that our joint venture with SanDisk will allow us to produce cost competitive next generation memories at Yokkaichi."
At the same time, Toshiba has signed a non binding memorandum of understanding with SanDisk that allows the latter to invest in the new facility. Sanjay Mehrotra, SanDisk's president and CEO, noted: "We are pleased to continue our long standing collaboration with Toshiba in this new wafer fab, which will advance our leadership in memory technology into the 3D NAND era."
