Under the terms of the agreement, Weebit ReRAM IP will be integrated into onsemi’s Treo platform, to provide embedded non-volatile memory (NVM). Weebit ReRAM integration into a Bipolar CMOS, DMOS (BCD) process provides a low-power, cost-effective NVM that has proven excellent retention at high temperatures.
Weebit Nano’s ground-breaking Resistive RAM (ReRAM) addresses the growing need for significantly higher performance and lower power memory solutions in a range of new electronic products such as Internet of Things (IoT) devices, smartphones, robotics, autonomous vehicles, 5G communications and artificial intelligence.
The company’s ReRAM allows semiconductor memory elements to be significantly faster, less expensive, more reliable and more energy efficient than those using existing flash memory solutions. In addition, because the technology is based on fab-friendly materials, it can be quickly and easily integrated with existing flows and processes, without the need for special equipment or large investments.
Commenting on the announcement Coby Hanoch, CEO of Weebit Nano, said, “We are delighted to announce Weebit’s latest commercial agreement with onsemi, one of the world’s top semiconductor integrated device manufacturers. This agreement is further industry recognition that ReRAM is the non-volatile memory solution best positioned to replace traditional flash storage, with Weebit being a leading independent provider of ReRAM.”
