The two companies are designing a full IP memory module that integrates a multi-megabit ReRAM block targeting an advanced 22nm FD-SOI process.
Weebit’s first silicon wafers that integrate its embedded ReRAM module at 130nm have shown positive early test results, and the company said that it had successfully demonstrated production level parameters at 28nm. Now, Weebit is looking to accelerate its development plans to scale its technology to process nodes where existing embedded Flash technology is no longer viable.
Coby Hanoch, CEO of Weebit Nano, said: “We continue to progress Weebit’s memory technology to smaller geometries that serve applications such as IoT, 5G and AI, which are driving the need for a new type of non-volatile memory in process nodes where embedded flash is no longer a realistic option. We have embarked on this new 22nm program to enable future customers to use our ReRAM technology to create exciting new products in advanced geometries.”
Commenting Olivier Faynot, Head of Silicon Component Division, CEA-Leti, added, “FD-SOI technology provides exceptional performance at very low voltages with low leakage and is broadly adopted by the industry. Combining ReRAM technology with FD-SOI holds great promise for low-power embedded devices, which need a new type of non-volatile memory and will benefit from its efficiency and robustness.”
