World's first 40nm memory IP developed for automotive real time applications

According to the semiconductor specialist, it will also be the first to launch 40nm embedded Flash microcontrollers for automotive applications using this Flash technology. Samples will be available by the beginning of Autumn 2012. The company's Flash metal oxide nitride oxide silicon (MONOS) technology is scalable and is designed to provide high reliability and performance. Evaluation results available from 40nm Flash test devices reveal that they achieve 'excellent characteristics' for data retention, program/erase cycle enduring and programming time. Renesas says its 40nm process node enables integration of several functional safety related and communication interface. The Renesas 40nm Flash memory IP guarantees 20 years of data retention and can be read from up to 170°C junction temperature. The code Flash supports real time speed of 120MHz and, according to Renesas, the data Flash achieves industry leading long data retention period of 20 years – even after 125,000 of program/erase cycles.