The 300A rated current is said to make the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment. The module is also claimed to have 77% lower switching loss compared to conventional IGBT modules, which is said to enable high-frequency operation, meaning smaller cooling systems and peripheral components, improving efficiency.
To take advantage of the high-speed writing capability of SiC products, the BSM300D12P2E001 features an optimised chip layout and module construction that reduces internal inductance and suppressing surge voltage while enabling support for current operation up to 300A.
The device is an H-Bridge SiC module that integrates a SiC SBD and SiC-MOSFET into a single 152 x 60 x 20mm package which operates across a temperature range from -40 to 150°C.
