In response to this trend, Infineon Technologies has introduced the CoolSiC Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V.
The product family is suitable for applications with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A making them suitable for higher DC link voltage applications such as in solar and EV charging applications.
The product family comes in a TO-247PLUS-4-HCC package, with 14 mm creepage and 5.4 mm clearance distance. This, together with a current rating of up to 80 A, enables a significantly higher power density. It also allows developers to achieve higher power levels in their applications with only half the component count of 1200 V solutions. This simplifies the overall design and enables a smooth transition from multi-level topologies to 2-level topologies.
In addition, the CoolSiC Schottky diode 2000V G5 utilises the .XT interconnection technology that leads to significantly lower thermal resistance and impedance, enabling better heat management.
Robustness against humidity has been demonstrated in HV-H3TRB reliability tests.
The diodes exhibit neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.
The 2000 V diode family can be matched with the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package that Infineon introduced earlier this year.
The CoolSiC diodes 2000 V portfolio will be extended by offering them in the TO-247-2 package, which will be available later this year. A matching gate driver portfolio will also be available for the CoolSiC MOSFETs 2000 V.
