Navitas unveils first 8.5kW AI data centre power supply powered by GaN and SiC

Navitas Semiconductor, a developer of gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced the world’s first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies.

Credit: Navitas

The PSU is the first of its type to achieve 98% efficiency and is intended for next-generation AI and hyperscale data centres.

The AI-optimised 54V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilises high-power GaNSafe and Gen-3 Fast SiC MOSFETs configured in 3-phase interleaved PFC and LLC topologies, to ensure both high levels of efficiency and performance, with the lowest component count.

The PSU’s shift to a 3-phase topology for both the PFC and LLC (vs. 2-phase topologies used by competing PSUs) enables what is claimed as the industry’s lowest ripple current and EMI. In addition, the PSU reduces the number of GaN and SiC devices by 25% compared with the nearest competing system, which reduces the overall cost.

The PSU has an input voltage range of 180 to 264 Vac, a standby output voltage of 12 V, and an operating temperature range of -5oC to 45oC. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender.

The 3-Phase LLC topology is enabled by high-power GaNSafe, which is specifically created for demanding, high-power applications, such as AI data centres and industrial markets.

Navitas’ 4th generation integrates control, drive, sensing, and critical protection features that enable much improved reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control.

All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.

Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)MAX from 25 to 98 mΩ.

The 3-Phase interleaved CCM TP-PFC is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, delivering cool-running, fast-switching, and improved levels of robustness to support faster charging EVs and up to 3x more powerful AI data centres.

“This complete wide bandgap solution of GaN and SiC enables the continuation of Navitas’ AI power roadmap which enables this 8.5kW and plans to drive to 12kW & higher in the near-term”, said Gene Sheridan, CEO and co-founder of Navitas. “As many as 95% of the world’s data centres cannot support the power demands of servers running NVIDIA’s latest Blackwell GPUs, highlighting a readiness gap in the ecosystem. This PSU design directly addresses these challenges for AI and hyperscale data centres.”