These devices have been designed to combine high efficiency with reduced spiking behaviour in telecommunications, server computing, industrial, power supply, fast charging, USB-PD, and motor control applications.
The Qg*RDSon figure of merit has long been a focus for semiconductor manufacturers aiming to improve the efficiency of MOSFET switches. However, relentlessly pushing this figure lower has had the unintended consequence of increasing spiking levels when a MOSFET switches on or off, increasing the amount of generated electromagnetic interference (EMI).
Having identified this as an emerging issue, Nexperia’s NextPower 80/100 V MOSFETs with lower Qrr (reverse recovery charge), makes it possible to significantly reduce the amount of spiking during switching transitions while exhibiting the same high-efficiency performance as competing MOSFETs but with lower EMI.
By making these high-efficiency, low-spiking NextPower 80/100 V MOSFETs available in LFPAK56 and LFPAK88, designers will not only be able to reduce application size and benefit from the added robustness of copper clip packaging but will aid design engineers and customers looking to qualify additional sources for their existing designs.
