These new NextPower 80/100 V MOSFETs are optimised for low RDS(on) and low Qrr, to deliver high efficiency and low spiking in applications including servers, power supplies, fast chargers and USB-PD as well as for a wide range of telecommunications, motor control and other industrial equipment.
Designers can choose from a range of 80 V and 100 V devices, with RDS(on) from 1.8 mΩ to 15 mΩ.
Many MOSFET manufacturers focus on achieving high efficiency through low QG(tot) and low QGD, however, Nexperia has identified Qrr as being even just as important due to its impact on spiking and, in turn, the amount of electromagnetic interference (EMI) generated during device switching.
By focusing on this parameter, Nexperia has been able to significantly reduce the level of spiking produced by its NextPower 80/100 V MOSFETs and lowered the amount of EMI they produce. This brings significant benefits for end users by reducing the probability of a costly late-stage redesign to include additional external components if their application fails electromagnetic compatibility (EMC) testing.
The on-resistance (RDSon) of these new MOSFETs has been reduced by up to 31% compared to currently available devices.
Nexperia said that it also plans to further strengthen its NextPower 80/100 V portfolio later this year with the release of an additional LFPAK88 MOSFET offering RDS(on) down to 1.2 mΩ @ 80 V, as well as introducing the power dense CCPAK1212 to the portfolio.
