The AEC-Q101 automotive grade SiC diodes will be showcased at PCIM and aims to deliver the reliability and ruggedness needed by modern automotive applications, along with the performance benefits synonymous with Wide Band Gap (WBG) technologies.
According to ON Semi, SiC technology provides superior switching performance and higher reliability compared to silicon devices. The diodes have no reverse recovery current, and switching performance is independent of temperature.
The SiC diodes are designed for automotive applications, featuring what ON Semi describes as “excellent” thermal performance, increased power density, reduced EMI and cost, and a smaller system size.
The diodes are available in surface mount and through-hole packages, including TO-247, D2PAK and DPAK. The FFSHx0120 1200 Volt (V) Gen1 devices, and FFSHx065 650 V Gen2 devices offer zero reverse recovery, low forward voltage, temperature independent current stability, low leakage current, high surge capacity and a positive temperature coefficient.
They are also designed to deliver improved efficiency, while the faster recovery should increase switching speeds, thereby reducing the size of magnetic components required.
In order to meet the robustness requirements and perform reliably in the harsh electrical environments of automotive applications, the diodes have also been designed to withstand high surge currents. They also include a unique, patented termination structure that improves reliability and enhances stability, ON Semi says. Operating temperature range is -55°C to +175°C.
ON Semi will also be demonstrating its advanced SPICE model at PCIM, that is sensitive to process parameter and layout perturbations, and therefore, represents a step-change versus current industry modelling capabilities. Using this tool, ON Semi says circuit designers can evaluate technologies early in the simulation process, rather than through costly and time-consuming fabrication iterations.
