In addition, in a further extension to its portfolio of SiC diodes, Nexperia is now also offering industrial-grade devices with current ratings of 6 A, 16 A, and 20 A in TO-220-2, TO-247-2, and D2PAK-2 packaging to facilitate greater design flexibility.
These diodes address the challenges of demanding high voltage and high current applications including switched-mode power supplies, AC-DC and DC-DC converters, battery-charging infrastructure, motor drives, uninterruptible power supplies as well as photovoltaic inverters for sustainable energy production.
The merged PiN Schottky (MPS) structure of these devices provides additional advantages over similar competing SiC diodes, including outstanding robustness against surge currents. This eliminates the need for additional protection circuitry, thereby significantly reducing system complexity and enabling hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications.
Nexperia’s ‘thin SiC’ technology also delivers a thinner substrate (one-third of its original thickness) which dramatically reduces the thermal resistance from the junction to the back-side metal. This results in lower operating temperature, higher reliability and device lifetime, higher surge current capability, and lower forward voltage drop.
