The TO-247 MOSFET package design has been introduced by Toshiba Electronics Europe, targeting power factor control and switching loss, which occurs more often as the switching frequency is increased in three pin packages. It is equipped with high speed DTMOS-H chips with low QGD to optimise switching behaviour.
With the TO-247 four pin package an additional source signal terminal is separated as a 'Kelvin source'. By using this source pin, di/dt and switching efficiency can be increased. Compared to a conventional three pin solution, the switching loss E(on) will be reduced by about 15%.
The DTMOS IV-H chips are made using Toshiba's Deep Trench technology that delivers lower ON resistance (RDS(ON)) at higher temperatures. It also offers reduced turn-off switching losses (EOSS) than previous technology generations. The combination of smaller increases in RDS(ON) at high temperatures and reduced EOSS provides higher efficiency for power supplies and assists designers in minimising system size.
