Silicon diodes fill gap in portfolio

Manufactured using Infineon's ultrathin wafer process, the diode families are said to complement the company's 600V and 650V diode portfolio by filling the gap between silicon carbide and emitter controlled diodes. "The new Rapid ultrafast and hyperfast diodes provide outstanding efficiency, reliability based on Infineon's renowned quality, and an ideal cost-performance balance," says Roland Stele, marketing director for Infineon's igbt power discrete products. "Optimised to work in harmony with our CoolMOS mosfet and TRENCHSTOP 5 igbt devices, Rapid diodes represent a further step towards offering our customers a full system solution." The Rapid 1 diode family has a 1.35V temperature stable forward voltage (VF) for low conduction losses and soft recovery. The devices are suited to power factor correction topologies. The Rapid 2 diode family is designed for applications switching between 40kHz and 100kHz. It offers low reverse recovery charge and reverse recovery time. This is said to minimise reverse conduction effects attributed to power switch turn on losses and thus provides maximum efficiency.