With a Qrr of just 14 nC at 25°C, it improves the efficiency of the PFC stage of on-board chargers and significantly reduces the thermals of the PFC MOSFETs. The AEC-Q101-qualified QH12TZ600Q offers the same low-switching loss performance of a silicon carbide (SiC) device without the disadvantages of moving to more expensive technology.
The QH12TZ600Q uses merged PiN and Schottky diode technology to achieve high performance. Its smooth reverse recovery current transition characteristics not only increase efficiency, but also reduce EMI and peak reverse voltage stress, eliminating the need for snubbers when used as output rectifiers in on-board chargers.
Devices are available in the compact, 2.5 kV isolated TO-220 package which enables direct mounting to metal heat sinking, facilitating much improved thermal performance.
