Featuring an optimised chip design, the π-MOS IX series can achieve up to 5dB lower peak EMI noise than the current generation (π-MOS VII series), while maintaining the same high level of efficiency.
The initial π-MOS IX series will include the TK1K9A60F, TK1K2A60F, TK750A60F and TK650A60F with RDS(ON) values ranging from 1,9Ohm down to 0,65Ohm . They have the same rated avalanche current and DC current (ID), making it simple and easy to upgrade existing MOSFETs.
The devices are housed in a standard TO-220SIS package and offer greater design freedom, making the task of designing-in MOSFETs simpler. Toshiba said that it will expand the π-MOS IX series with the addition of more 600V devices as well as 500V and 650V variants.
