Featuring a creepage distance of 8mm, the ICs have an input-to-output isolation voltage of 1200V. They are designed to drive high-voltage power MOSFETs and IGBTs. Target applications include general-purpose and photovoltaic inverters, industrial drives, charging stations for electric vehicles, welding equipment, and commercial and agricultural vehicles. An optimised pin-out simplifies PCB design for low-impedance power supplies.
The ICs deliver drive currents on separate sink and source output pins of 0.5A (1EDI05I12AH), 2A (1EDI20I12AH), 4A (1EDI40I12AH) and 6A (1EDI60I12AH) respectively. Typical propagation delay for these devices is 300ns. For higher speed applications, the 1EDI20H12AH and 1EDI60H12AH have a reduced propagation delay of 120ns, suiting them for use in SiC-MOSFET based applications. Three further variants (1EDI10I12MH, 1EDI20I12MH and 1EDI30I12MH) feature an integrated Miller clamp and provide respective output currents of 1, 2 and 3A.
