Engineering publications brought to you by Mark Allen

Memory

The switch that could double USB memory

Rugged Flash Drive five times faster with USB 3.0

News Analysis: All change with phase change?

MTJ stacking process shrinks STT-MRAM die size

IBM researchers claim 3bit per cell phase change memory

MRAM is finding ways around the memory chasm

1T-MONOS is being proposed as a solution for applications where flash hasn’t previously been embedded

Wearable electronics are a step closer to reality

256Mbit MRAMs sampling; 1Gbit to come soon

Samsung begins mass producing industry’s first 10nm class DRAM

As MCUs head to the leading edge, will NVM oust flash?

Superconductor-based memory could be hundreds of times faster than current devices