Engineering publications brought to you by Mark Allen

Memory

IBM celebrates 20 years of MRAM with 11nm announcement

The switch that could double USB memory

Rugged Flash Drive five times faster with USB 3.0

News Analysis: All change with phase change?

MTJ stacking process shrinks STT-MRAM die size

IBM researchers claim 3bit per cell phase change memory

MRAM is finding ways around the memory chasm

1T-MONOS is being proposed as a solution for applications where flash hasn’t previously been embedded

Wearable electronics are a step closer to reality

256Mbit MRAMs sampling; 1Gbit to come soon

Samsung begins mass producing industry’s first 10nm class DRAM

As MCUs head to the leading edge, will NVM oust flash?