28nm HKMG process to boost operating times
1 min read
IBM's Manufacturing Alliance has defined a 28nm high K metal gate cmos process which extends the joint development agreements between the partners. Early risk production is anticipated to start in the second half of 2010.
By assuring a path from 32nm to 28nm technology, this migration methodology offers clients lower risk, reduced cost and faster time to market.
"Through this collaboration, IBM and its alliance partners are helping to accelerate development of next generation technology to achieve high performance, energy efficient chips at the 28nm process level, maintaining our focus on technology leadership for our clients and partners," said Gary Patton, vice president of IBM's Semiconductor Research and Development Center.
Preliminary results are said to indicate that 28nm technology can provide a 40% performance improvement and a reduction in power consumption of more than 20%, compared to 45nm devices.
The Alliance partners – IBM, Chartered Semiconductor, Globalfoundries, Infineon, Samsung and STMicroelectronics – are jointly developing the 28m process technology, which is likely to find application in power sensitive mobile and consumer electronics applications.
