Samsung, Global Foundries announce 28nm collaboration
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Global Foundries and Samsung Electronics have announced plans to synchronise four of their fabrication facilities to produce chips based on a new 28nm High-K Metal Gate (HKMG) process.
The agreement follows a 2010 collaboration between GloFo, Samsung, IBM, and STMicroelectronics, in which all four firms agreed to cooperate in building out their low power 28nm process nodes.
The new alliance will see the development of chips specifically designed for mobile device applications, which GloFo claims will offer a 60% reduction in power consumption at the same frequency or 55% performance boost at the same leakage over 45nm low power SoC designs.
"This 28nm process will be the first semiconductor technology to truly eliminate the border between desktop computers and mobile devices," said Jay Min, vp of System LSI foundry marketing, Device Solutions, Samsung.
The four fabs, all 300mm, are GloFo's in Dresden and New York, and Samsung's in Korea and Austin, Texas.
"With this new collaboration, we are making one of the industry's strongest manufacturing partnerships even stronger, while giving customers another platform to drive innovation in mobile technology," stated Jim Kupec, senior vp of worldwide sales and marketing at GloFo.
