NEC, Toshiba join IBM Alliance at 28nm
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NEC Electronics and Toshiba, already involved in the IBM technology alliance, have extended their partnership to develop a 28nm bulk cmos process using high K metal gate technology.
The 28nm alliance builds on earlier joint development work in 32nm high K metal gate technology. Clients can transition to 28nm technology without the need for major redesign, with lower risk, reduced cost and faster time to market.
"NEC Electronics and Toshiba bring significant skills and resources that will help ensure development of an industry leading 28nm technology offering," said Gary Patton, vp of IBM's Semiconductor Research and Development Center. "Together, the alliance partners will deliver a high performance, energy efficient technology to enable a full range of multifunction, power sensitive mobile and consumer electronics."
"28nm low power process technology will dramatically enhance the product's density and performance, as well as power consumption compared to the former 40nm node," said Masao Fukuma, NEC Electronics' senior vp. "We will focus on being the first to market with the SoC products that can meet our customers' expectations with added value."
"This alliance brings together industry leaders in advanced process technology," said Masakazu Kakumu, vp of Toshiba's System LSI division. "The program supports our efforts to maximise R&D efficiency and we will apply its results to offering our customers a new generation of high quality products delivering better performance with lower power consumption."
Toshiba joined IBM's bulk semiconductor process technology development alliance in December 2007 and NEC Electronics joined in September 2008.