Intel uses high k and metal gates in 45nm process
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Intel has used a high k and metal combination to create the transistor gate electrode in its latest process technology. According to Intel cofounder Gordon Moore: “The implementation of high k and metal materials marks the biggest change in transistor technology since the introduction of polysilicon gate mos transistors in the late 1960s.”
One of the challenges posed by technology shrinks is the increase in leakage. Intel claims to have solved the problem by replacing the silicon dioxide which has been used until now as the gate dielectric with hafnium based compouned. This is said to reduce leakage by a factor of 10.
However, the high k gate dielectric is not compatible with current silicon gates, which has required the development of new metal materials. For the moment, Intel is not divulging the ‘recipe’.
Between them, the combination of high-k and metal gates have provided a 20% increase in drive current on Intel’s 45nm node, whilst reducing source-drain leakage by more than five times.
Mark Bohr, Intel senior fellow, noted: “Our engineers and designers have achieved a remarkable accomplishment that ensures the leadership of Intel products and innovation. Our implementation of novel high-k and metal gate transistors for our 45nm process technology will help Intel deliver even faster, more energy efficient multicore products that build upon our successful Intel Core 2 and Xeon family of processors, and extend Moore’s Law well into the next decade.”
Meanwhile, samples of Intel’s Penryn family of processors have been produced on the new process.
