Renesas announces newly developed structure Blue Violet laser market
1 min read
Renesas Electronics has announced the company's first Blue Violet semiconductor laser diode with a wavelength of 405nm and a new structure incorporating an optical waveguide into the semiconductor device. According to Renesas, this enables high power output and makes it suitable for mass production.
The NV4A61MF blue-violet semiconductor laser diode has been designed for Blu-ray disc recording and playback, and features a new inner stripe structure in which the optical waveguide that substantially influences the quality of the laser diode is incorporated into the semiconductor.
According to Renesas, in this new structure, the optical waveguide is fabricated on a gallium nitride (GaN) substrate with approximately 10 times improved accuracy and 20% increased heat dissipation compared to conventional devices, in which the optical waveguide is formed on the surface of the laser chip.
Renesas says the new device can deliver optical power output of 350mW, suitable for 8x Blu-ray disc recording even at temperatures of up to 85°C. The current and optical output characteristics have been designed to provide linearity from the low-output range through the high temperature, high output range. And laser noise that occurs during playback has been reduced to less than one third of the company's existing devices, realising 5dB/Hz improvement.
The NV4A61MF is currently available for samples, while mass production is estimated to begin in August 2010. Renesas Electronics aims to release the next 420mW laser for dual-layer, 12× Blu-ray recording by December 2010.
