Renesas quadruples memory on new network devices

According to Renesas, the new network memory devices provide low power consumption, large capacity and high speed in one chip. The devices have four times more memory and a 30% faster random cycle performance for high speed reads and writes than the company's existing 288Mbit low latency DRAM devices. Renesas says that the new devices still hold memory power consumption to the same level as the existing product. The network memory devices are based on Renesas Electronics' 40nm eDRAM technology and the company's circuit technologies. The operating frequency of the memory devices has increased from 400 to 800MHz, compared to its existing device. To operate the 800MHz ddr interface for the 36bit data I/O in a stable manner, the company has reduced the voltage of the I/O circuits supporting a power supply of 1V and adopted high to stabilise operations. The devices have been designed to provide functions such as programmable on die termination, which integrates on chip termination devices for the input signal pins. These functions also include a data inversion function that reduces noise at data output, a per-bit deskew function that end-product manufacturers can use to adjust signal input and output timings on an individual signal-pin basis, and a mirroring function that can easily control the wiring lengths when clam-shell mounting is used on the printed circuit board.