Smallest sram cell yet
Toshiba, IBM and AMD announced at the International Electron Device Meeting in San Francisco that they have developed the world’s smallest functional sram cell that makes use of FinFETs.
The cell, which has an area of 0.128µm2, has been developed with high k/metal gate (HKMG) material. In achieving this goal, the team optimised the processes – especially for depositing and removing materials – including HKMG from vertical surfaces of the non planar FinFET structure. The researchers also say the design is likely to scale to the 22nm node or beyond.
