Tiny FemtoFET mosfets offer ‘lowest’ on resistance
A new family of FemtoFET mosfet transistors is available from Texas Instruments, designed to offer an ultra low on resistance of 100mill-ohms from a tiny 0.6 x 1 x 0.35mm package.
Targeted at space constrained handheld applications such as smartphones and tablets, the three N channel and P channel devices are packaged in a land grid array that reduces board space by up to 40% compared to chip scale packaging.
All the FemtoFET mosfets provide ESD protection greater than 4,000V. Continuous drain current values ranging from 1.5 to 3.1A provide more than double the performance compared to similar size devices on the market.
