ST introduces the Page EEPROM two-in-one memory

STMicroelectronics’ new Page EEPROM combines the power efficiency and durability of an EEPROM with the capacity and speed of a Flash memory.

Credit: STMicroelectronics

This hybrid memory is suitable for applications that face extreme size and power constraints and addresses the growing demand for storage in embedded applications, needed to support more sophisticated features and run data-hungry edge-AI algorithms.

One example is behind-the-ear hearing aids, where Page EEPROM can reduce the bill of materials and can help to create products that are both slimmer and more comfortable to wear.

In addition to wearables, Page EEPROM is intended for applications such as healthcare devices, asset trackers, e-bikes, as well as other industrial and consumer products.

“The intelligent edge has evolved quickly and is profoundly changing demands on embedded memory storage density, performance, and power consumption,” said Philippe Ganivet, STMicroelectronics EEPROM product line manager.  “Our Page EEPROM is an ultra-low-power memory that complements a microcontroller for remote IoT modules that operate on battery power.”

ST’s Page EEPROM family offers densities of 8Mbit, 16Mbit, and 32Mbit, greatly increasing storage over standard EEPROM devices.

Embedded smart page-management allows byte-level write operations for processes like data logging, while also supporting page/sector/block erase and page-program up to 512 bytes for efficiently handling firmware over the air (OTA) updates.

The devices also allow buffer loading, which can program several pages simultaneously to cut the time for loading software in production. The data-read speed of 320 Mbit/s is about 16 times faster than standard EEPROM, while write-cycle endurance of 500,000 cycles is several times higher than conventional serial Flash.

Also featuring a peak-current control, Page EEPROM has been designed to minimise power supply noise and prolongs the runtime of battery-operated equipment. The write current is below that of many conventional EEPROMs and there is also a deep power-down mode with fast wakeup that reduces the current to below 1µA.

These devices offer a 100-year data retention, and they are included in ST’s 10-years product longevity program that guarantees long-term product availability.