The two companies are also jointly developing new RRAM solutions for the automotive market.
eMemory’s 8Mb RRAM IP, which features an additional 16Kb information block and critical functions such as in-chip repair and error detection/correction, has been designed for code storage in MCUs and smart power management ICs used in IoT devices. It can also enable in-memory computing for AI.
UMC offers a 22nm 0.8V/2.5V RRAM platform, which has the advantages of fewer mask layers, shorter cycle time, and easier integration with its specialty process technologies such as Bipolar-CMOS-DMOS (BCD) and high voltage.
"RRAM is a multi-time programmable embedded memory option now available for 22nm and 40nm processes. Our next RRAM specification on UMC’s 22nm platform is targeting bigger density (16Mb), higher speed, higher write temperature and higher storage lifetime for automotive applications," explained C.Y. Lin, CTO and GM of MTP Business Group at eMemory. "Furthermore, eMemory and UMC continue to develop RRAM solutions for 0.8V/1.8V ULP. With low operational voltage for READ and WRITE modes, our RRAM will be the most cost-effective eFlash solution for mainstream processes with scalability for more advanced process nodes."
“Successful verification of eMemory’s IP marks the launch of our 22nm RRAM platform, which provides customers with an enhanced memory solution to develop their next-generation products,” said Steven Hsu, Vice President of the Technology Development Division at UMC.
eMemory’s RRAM IP comes with an endurance of 10k cycle times and 10-year data retention and has been built with friendly interfaces, comprehensive user and test modes, and programmability at 0.8V/2.5V nominal dual voltage.
RRAM is well-known for having no changes on the front-end process and nearly no extra thermal budget owing to its low-temp backend flow. Compared with the split-gate Flash, RRAM has a simpler structure, fewer masks, easier fabrication, and higher CMOS-process compatibility.
