Over the past three years, Mazda and ROHM have been working to advance the development of inverters using silicon carbide (SiC) power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create new and innovative automotive components for next-generation electric vehicles.
GaN is attracting attention as a next-generation material for power semiconductors as compared to conventional silicon (Si) power semiconductors, it can reduce power conversion losses and contribute to the miniaturisation of components through high-frequency operation.
Both companies will collaborate to transform these strengths into a package that will address the entire vehicle and deliver innovative solutions in terms of both weight reduction and design. Mazda and ROHM said that their aim was to unveil a demonstration model in 2025, with practical implementation targeted for 2027.
“As the shift towards electrification accelerates in pursuit of carbon neutrality, we are delighted to collaborate with ROHM, which aims to create a sustainable mobility society with its semiconductor technology and advanced system solution capabilities, in the development and production of automotive components for electric vehicles” said Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of Mazda. “We are excited to work together to create a new value chain that directly connects semiconductor devices and cars.”
Katsumi Azuma, Member of the board and Senior Managing Executive Officer of ROHM added, “ROHM's EcoGaN, capable of high-frequency operation, and the control IC that maximises its performance are key to miniaturisation and energy-saving. To implement this, collaboration with a wide range of companies is essential, and we have established various partnerships for the development and mass production of GaN.
“By collaborating with Mazda, which aims to create 'cars that coexist sustainably with the earth and society,' we will understand the requirements for GaN from the perspective of application and final product development, contributing to the spread of GaN power semiconductors and the creation of a sustainable mobility society.”
